EECS 168 Introduction to VLSI Design Sheldon Tan Homework 2 solution

HOMEWORK > EECS 168 Introduction to VLSI Design Sheldon Tan Homework 2 solution

University of California, Riverside CS 168 Please use the 180 nm process parameters shown at the end of homework for all the homework questions. For NMOS as Rn = 6.47KΩ, for PMOS as Rp = 29.6KΩ, and C1=0.89fF) 1. Design the static complementary gates (CMOS gates) for the following logic expressions using pull-up/pull-down networks. Use a truth table to show logical eq ...[Show More]

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