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University of Florida EEE 5400 Question 1: Silicon FinFET Design Point Device Parameter L Gate = Channel Length 20nm EOT (equivalent oxide thickness) 1nm Power supply 1.0V Fin thickness 8nm Fin Material Silicon Fin Height 50nm 1. What is the channel sheet charge in units of C/cm2 2. What is the approximate maximum current in units of mA/um 3. What is the approximate Vdsat (dr ...[Show More]

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